(China (Mainland))
Product Summary
The TLP521-1GR consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.
Parametrics
Absolute maximum ratings: (1)Forward current:70mA; (2)Forward current derating:-0.93mA/℃ (Ta ≥ 50℃); (3)Pulse forward current:1A (100μ pulse, 100pps) ; (4)Reverse voltage:5V; (5)Junction temperature:125℃; (6)Collector-emitter voltage:55V ; (7)Emitter-collector voltage:7V; (8)Collector current:50mA; (9)Collector power dissipation (1 circuit):150mW; (10)Collector power dissipation derating(1 circuit Ta≥25℃):-1.5mW/℃ ; (11)Junction temperature:125℃; (12)Storage temperature range:-55℃ to 125℃; (13)Operating temperature range:-55℃ to 100℃; (14)Lead soldering temperature:260℃(10 s).
Features
Features: (1)Collector-emitter voltage: 55 V (min) ; (2)Current transfer ratio: 50% (min), Rank GB: 100% (min) ; (3)Isolation voltage: 2500 Vrms (min) .
Diagrams
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 TLP504A |
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PHOTOCOUPLER DUAL TRANS-OUT 8DIP |
Data Sheet |
Negotiable |
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TLP504A−2 |
Other |
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Data Sheet |
Negotiable |
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TLP504A(F) |
Toshiba |
Transistor Output Optocouplers TR HIGH Vceo (55V) |
Data Sheet |
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TLP504A(GB) |
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PHOTOCOUPLER DUAL TRANS-OUT 8DIP |
Data Sheet |
Negotiable |
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TLP504A(GB,F) |
Toshiba |
Transistor Output Optocouplers 55Vceo 2500Vrms standard |
Data Sheet |
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TLP504A-2 |
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PHOTOCPLR QUAD TRANS-OUT 16-DIP |
Data Sheet |
Negotiable |
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