(China (Mainland))
Product Summary
The FDG6316P is a P-Channel 1.8V specified PowerTrench MOSFET which uses the advanced low voltage PowerTrench process of Fairchild. It has been optimized for battery power management applications. The applications of the FDG6316P include: Battery management, Load switch.
Parametrics
FDG6316P absolute maxing ratings: (1)VDSS Drain-Source Voltage: –12V; (2)VGSS Gate-Source Voltage: ± 8V; (3)ID Drain Current Continuous: –0.7 A; Pulsed: –1.8A; (4)PD Power Dissipation for Single Operation: 0.3W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +150℃.
Features
FDG6316P features: (1)-7 A, -12 V. RDS(ON) = 270 mΩ@ VGS = -4.5 V; RDS(ON) = 360 mΩ@ VGS = -2.5 V; RDS(ON) = 650 mΩ@ VGS = -1.8 V; (2)Low gate charge; (3)High performance trench technology for extremely low RDS(ON); (4)Compact industry standard SC70-6 surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDG6316P |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
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FDG6316P_Q |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
Negotiable |
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