SST39VF6401B-70-4C-EKE

Product Summary

The SST39VF6401B-70-4C-EKE is 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401B-70-4C-EKE write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF6401B-70-4C-EKE conforms to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST39VF6401B-70-4C-EKE devices provide a typical Word-Program time of 7 μsec. The SST39VF6401B-70-4C-EKE uses Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF6401B-70-4C-EKE is offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

Parametrics

SST39VF6401B-70-4C-EKE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (8)Output Short Circuit Current: 50 mA.

Features

SST39VF6401B-70-4C-EKE features: (1)Organized as 4M x16; (2)Single Voltage Read and Write Operation: 2.7-3.6V; (3)Superior Reliability; (4)Low Power Consumption (typical values at 5 MHz); (5)Hardware Block-Protection/WP Input Pin; (6)Sector-Erase Capability: Uniform 2 KWord sectors; (7)Block-Erase Capability: Uniform 32 KWord blocks; (8)Chip-Erase Capability; (9)Erase-Suspend/Erase-Resume Capabilities; (10)Hardware Reset Pin; (11)Security-ID Feature; (12)Fast Read Access Time: 70 ns; 90 ns; (13)Latched Address and Data; (14)Fast Erase and Word-Program; (15)CMOS I/O Compatibility; (16)JEDEC Standard.

Diagrams