Product Summary
The 1S1555 is a silicon epitaxial planar type. It is designed for detector and rectifier.
Parametrics
1S1555 absolute maximum ratings: (1)Maximum(peak)reverse voltage VRM: 35V; (2)Reverse voltage VR: 30V; (3)Maximum(peak)forward current IFM: 300mA; (4)Average forward current IO: 100mA; (5)Surge current(1 sec) IFSM: 1A; (6)Power dissipation P: 300mW; (7)Junction temperature Tj: 150℃; (8)Storage temperature range Tstg: -65~150℃.
Features
1S1555 features: (1)Low forward voltage: VF=1.0V(typ); (2)Small total capacitance: CT=1.3pF(typ).
Diagrams
![]() |
![]() 1S1588 |
![]() Fairchild Semiconductor |
![]() Diodes (General Purpose, Power, Switching) DISC BY MFG 3/04 |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() 1S1587 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() 1S1586 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() 1S1585 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|