(China (Mainland))
Product Summary
The BD135 is a NPN power transistor. The application of it is Driver stages in hi-fi amplifiers and television circuits.
Parametrics
BD135 absolute maximum ratings: (1)collector-base voltage open emitter:45 V; (2)collector-emitter voltage open base:45 V; (3)emitter-base voltage:5V; (4)collector current (DC):1.5 A; (5)peak collector current:2A; (6)peak base current:1A; (7)total power dissipation Tmb ≤ 70℃:8W; (8)storage temperature:-65℃ to +150℃; (9)junction temperature:150℃; (10)operating ambient temperature:-65℃ to +150℃.
Features
BD135 features: (1)High current (max. 1.5 A); (2)Low voltage (max. 80 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BD135 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Audio Amplifier |
Data Sheet |
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BD135,137,139 |
Other |
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Data Sheet |
Negotiable |
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 |
BD13510S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
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|
BD13510STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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BD135-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Silicon Trnsistr |
Data Sheet |
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BD13516S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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BD13516STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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|
BD1356S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
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