Product Summary

The N-Channel enhancement mode power field effect transistor FQPF12N60C is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF12N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF12N60C absolute maximum ratings: (1)VGSS Gate-Source Voltage: ± 30 V; (2)EAS Single Pulsed Avalanche Energy: 870 mJ; (3)IAR Avalanche Current: 12 A; (4)EAR Repetitive Avalanche Energy: 22.5 mJ; (5)Peak Diode Recovery dv/dt: 4.5 V/ns; (6)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (7)Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds: 300 ℃.

Features

FQPF12N60C features: (1)12A, 600V, RDS(on) = 0.65@VGS = 10 V; (2)Low gate charge ( typical 48 nC); (3)Low Crss ( typical 21 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF12N60C Gate Charge Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF12N60C
FQPF12N60C
Fairchild Semiconductor
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Data Sheet
Negotiable